Description
GSFK0253 20V N-Channel + P-Channel Complementary MOSFETs Main Product Characteristics Polarity VDSS RDS(ON) @VGS=±4.5V RDS(ON) @VGS=±3.3V ID N-Ch 2.
The GSFK0253 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
N-Ch
P-Ch
Gate-Source Voltage
VGS
±8
±8
Drain - Source Breakdown Voltage
V(BR)DSS
20
-20
Storage Temperature Range
TSTG
-55 to +150
Operating Junction Temperature Range
TJ
-55 to +150
Diode Co