Description
Main Product Characteristics V(BR)DSS 20V GSFKW0202 20V N-Channel MOSFET D D RDS(ON) ID 70mΩ 2.5A .
The GSFKW0202 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switch mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, @Steady-State (TA=25°C)1 Continuous Drain Current, @Steady-State (TA=70°C)1 Pulsed Drain Current2
Power Dissipation(TA=25°C)
Derating Factor(TA=25°C)
Junction