Description
GSFK0300 30V Dual N-Channel MOSFETs Main Product Characteristics VDS 30V S2 G2 D1 D1 D2 G1 G2 RDS(ON) ID 450mΩ 800mA D2 G1 S1 SOT-363 Feat.
The GSFK0300 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switch mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Power Dissipation (TC=25°C) Power Dissipation-Derate Above 25°C Thermal Resistance, Junctio