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K3568 Datasheet | Specifications & PDF Download

K3568

K3568 2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N .

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K3568 (Toshiba Semiconductor)

2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source O
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K3568 (INCHANGE)

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava
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INCHANGE Logo

2SK3568 (INCHANGE)

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava
(30 views)
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UK3568 (UTC)

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UK3568 SILICON N-CHANNEL MOS TYPE „ DESCRIPTION The UK3568 uses advanced trench technology to provide excellent RDS(O
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