K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FE.
Samsung semiconductor
K4X1G163PC-FE - Mobile DDR SDRAM
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
Samsung semiconductor
K4X1G163PC-LE - Mobile DDR SDRAM
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
Samsung semiconductor
K4X1G163PC-LG - Mobile DDR SDRAM
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
Samsung semiconductor
K4X1G163PC-FG - Mobile DDR SDRAM
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .