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NXP
BUK856-800A - Insulated Gate Bipolar Transistor IGBT
Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel ins.
NXP
BUK856-400IZ - Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel lo.
Inchange Semiconductor
2SK856 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Minimum Lot-to-Lot variations for .
