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BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

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Description

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL .
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications.

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Applications

* The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK856-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power d

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BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT NXP
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BUK856-800A
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