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BUK854-800A Insulated Gate Bipolar Transistor IGBT

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Description

Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A GENERAL .
Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.

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Applications

* QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off Energy Loss MAX. 800 12 85 3.5 0.5 UNIT V A W V mJ PINNING - TO220AB PIN 1 2 3 tab gate collector emitter collector DE

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Insulated Gate Bipolar Transistor IGBT NXP
NXP BUK854-800A-like datasheet