K8N80 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOK8N80 FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-R

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K8N80-VB K8N80-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 ° C (Ω) Qg max. (nC) Qgs (nC) Qgd (n

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AOK8N80 800V,7.4A N-Channel MOSFET General Description The AOK8N80 is fabricated using an advanced high voltage MOSFET process that is designed to de

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