K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G0.
Samsung
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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.
Samsung
K9F1G16Q0M-YIB0 - 1Gb 1.8V NAND Flash Errata
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.
Samsung semiconductor
K9F1G16Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio.
Samsung
K9F1G16Q0M-PCB0 - 1Gb 1.8V NAND Flash Errata
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.
Samsung
K9F1G16Q0M-PIB0 - 1Gb 1.8V NAND Flash Errata
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.