KILOBIT Datasheet | Specifications & PDF Download

FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce

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FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acc

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FINAL Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — 55 ns s Low power consumption — 20 µA typical

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FINAL Am27C64 64 Kilobit (8 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 45 ns s Low power consump

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QP27C256 & QP27C256L QP27C256 – 256 Kilobit (32K x 8) CMOS EPROM June 18, 2009 General Description The QP27C256 is a 32Kx8 (256-Kbit), UV erasable

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QP27C128 QP27C128 – 128 Kilobit (16K x 8) CMOS EPROM April 7, 2009 General Description The QP27C128 is a 16Kx8 (128-Kbit), UV erasable programmable

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FINAL Am27X128 128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: — Factory optimized progr

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QP27C256 & QP27C256L QP27C256 – 256 Kilobit (32K x 8) CMOS EPROM June 18, 2009 General Description The QP27C256 is a 32Kx8 (256-Kbit), UV erasable

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Features www.DataSheet4U.com • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximu

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FINAL Am28F256A 256 Kilobit (32,768 x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHA

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MOSEL VITELIC V29LC51000 512 KILOBIT (65,536 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s 64Kx8-bit Organization Ad

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FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce

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512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29

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512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29

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512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29

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FINAL Am27C256 256 Kilobit (32 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 45 ns s Low power cons

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FINAL Am28F512A 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High perfo

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Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Operating Frequency

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FINAL Am27X256 256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: — Factory optimized progr

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