
KSE801 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
KSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT
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KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON T.
KSE801 Distributor