KSE801 Datasheet (Fairchild Semiconductor) - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

KSE801, NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Sym