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KSE801 Datasheet - Fairchild Semiconductor

KSE801 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Sym.

KSE801_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

KSE801

Manufacturer:

Fairchild Semiconductor

File Size:

73.14 KB

Description:

Npn epitaxial silicon darlington transistor.

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KSE801 KSE801 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Fairchild Semiconductor