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KSE801 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Fairchild Semiconductor

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Description

KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT.

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Datasheet Specifications

Part number: KSE801
Manufacturer: Fairchild Semiconductor
File Size: 73.14 KB
Datasheet: KSE801_FairchildSemiconductor.pdf
Description: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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KSE801 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Fairchild Semiconductor

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