KSE182, KSE180 Datasheet - Samsung

KSE182 NPN EPITAXIAL SILICON TRANSISTOR

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO .

KSE180-Samsung.pdf

KSE182 Datasheet Preview — This datasheet PDF includes multiple part numbers: KSE182, KSE180. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KSE182, KSE180

Manufacturer:

Samsung

File Size:

54.29 KB

Description:

Npn epitaxial silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: KSE182, KSE180.
Please refer to the document for exact specifications by model.

KSE182 Distributor

📁 Related Datasheet

KSE180 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

KSE180 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

KSE180 NPN EPITAXIAL SILICON TRANSISTOR (Samsung)

KSE181 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

KSE181 NPN EPITAXIAL SILICON TRANSISTOR (Samsung)

KSE182 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

KSE13001 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

KSE13003 NPN Silicon Transistor (Fairchild Semiconductor)

TAGS

KSE182 KSE180 NPN EPITAXIAL SILICON TRANSISTOR Samsung