Datasheet4U Logo Datasheet4U.com

KSE802 Datasheet - Fairchild Semiconductor

KSE802 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Sym.

KSE802_FairchildSemiconductor.pdf

Preview of KSE802 PDF
KSE802 Datasheet Preview Page 2 KSE802 Datasheet Preview Page 3

Datasheet Details

Part number:

KSE802

Manufacturer:

Fairchild Semiconductor

File Size:

73.14 KB

Description:

Npn epitaxial silicon darlington transistor.

📁 Related Datasheet

KSE800 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR (Fairchild Semiconductor)

KSE801 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR (Fairchild Semiconductor)

KSE803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR (Fairchild Semiconductor)

KSE05VL4-C Transient Voltage Suppressors for ESD Protection (SeCoS)

KSE13001 NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

KSE13003 NPN Silicon Transistor (Fairchild Semiconductor)

KSE13003T NPN Silicon Transistor (Fairchild Semiconductor)

KSE13004 NPN Silicon Transistor (Fairchild Semiconductor)

TAGS

KSE802 KSE802 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Fairchild Semiconductor

KSE802 Distributor