KSE181, KSE180 NPN EPITAXIAL SILICON TRANSISTOR

Samsung

Description

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 AB.

📥 Download Datasheet

KSE181 Datasheet Preview — This datasheet PDF includes multiple part numbers: KSE181, KSE180. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: KSE181, KSE180
Manufacturer: Samsung
File Size: 54.29 KB
Datasheet: KSE180-Samsung.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: KSE181, KSE180.
Please refer to the document for exact specifications by model.

Applications

* TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( T

KSE181 Distributors

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KSE180 NPN EPITAXIAL SILICON TRANSISTOR Samsung

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KSE3055T