KSE181, KSE180 Datasheet - Samsung

KSE181 NPN EPITAXIAL SILICON TRANSISTOR

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO .

KSE180-Samsung.pdf

KSE181 Datasheet Preview — This datasheet PDF includes multiple part numbers: KSE181, KSE180. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KSE181, KSE180

Manufacturer:

Samsung

File Size:

54.29 KB

Description:

Npn epitaxial silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: KSE181, KSE180.
Please refer to the document for exact specifications by model.

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KSE181 KSE180 NPN EPITAXIAL SILICON TRANSISTOR Samsung

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