| No |
Part Number |
Description |
Manufacture |
PDF |
| 101 |
KTD-LM16 |
Memory Upgrade Module Kits for Dell Latitude LM Series
KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 ( |
ETC
|
|
| 100 |
KTD-LM32 |
Memory Upgrade Module Kits for Dell Latitude LM Series
|
ETC
|
|
| 99 |
KTD-LM64 |
Memory Upgrade Module Kits for Dell Latitude LM Series
KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 ( |
ETC
|
|
| 98 |
KTD-LM8 |
Memory Upgrade Module Kits for Dell Latitude LM Series
|
ETC
|
|
| 97 |
KTD1003 |
EPITAXIAL PLANAR NPN TRANSISTOR
J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Volt |
KEC
|
|
| 96 |
KTD1028 |
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17 |
KEC
|
|
| 95 |
KTD1028V |
EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC
|
|
| 94 |
KTD1047 |
TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERI |
KEC
|
|
| 93 |
KTD1047B |
TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
|
KEC
|
|
| 92 |
KTD1145 |
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE. STROBO, DC-DC CONVERTER, MOTOR DRIVE.
FEATURES ᴌLow Saturation Voltage.
: VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA). ᴌHigh Collector |
KEC
|
|
| 91 |
KTD1146 |
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit)
FEATURES ᴌLow VCE(SAT). ᴌHigh Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACT |
KEC
|
|
| 90 |
KTD1302 |
TRANSISTOR
KTD1302
TRANSISTOR (NPN)
FEATURES z Small Flat Package z Audio Muting Application z High Emitter-Base Voltage
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise n |
Jin Yu Semiconductor
|
|
