
KTD1003 - EPITAXIAL PLANAR NPN TRANSISTOR
J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe
Rating:
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(5 votes)