KTD998 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor KTD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement t

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary t

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