isc Silicon NPN Power Transistor KTD998 DESCRIPT.
KTD998 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor KTD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement t.KTD998 - TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary t.