KY-040 Datasheet | Specifications & PDF Download

SBL3030PT and SBL3040PT Dual Schottky Rectifier Reverse Voltage 30 and 40 V Forward Current 30 A 0.245 (6.2) 0.225 (5.7) 0.840 (21.3) 0.820 (20.8) T

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www.vishay.com SBL20x0CT, SBLF20x0CT, SBLB20x0CT, Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB ITO-220AB SBL20x0C

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KY-040 Rotary encoder KY-040 Rotary encoder Contents 1 Picture

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SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss,

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SB1020 THRU SB1060 SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 10.0A FEATURE High current capability, Low forward voltage drop Low pow

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() CRST040N10N, CRSS037N10N SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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SEP ELECTRONIC CORP. SBL1030CT thru SBL1060CT 10 A Schottky Barrier Rectifier Rectifier Reverse Voltage 30 to 60V Features Extremely low VF Epitaxia

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www.DataSheet4U.com DATA SHEET SB2020FCT~SB20200FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3)

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www.DataSheet4U.com Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Id

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® WON-TOP ELECTRONICS SB4020FCT – SB40100FCT 40A DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring for Transient Prot

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C3D04060A 3rd Generation 600 V, 4 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thr

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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BLGALAXY ELECTRICAL SBL2030CT---SBL20100CT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A FEATURES Metal-Semiconductor junct

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ShenZhen YueFeiDa Electronics Technology Co.,Ltd MBR1020F THRU MBR10200F 10.0AMP. SCHOTTKY BARRIER RECTIFIERS FEATURE ITO-220A .High current capa

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DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN . . . emplo

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Datasheet SDS120J040G2 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tem

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NOT RECOMMENDED FOR NEW DESIGN SBL3030PT - SBL3060PT 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction f

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