L-819 Datasheet | Specifications & PDF Download

3.3 VOLT HIGH-DENSITY SUPERSYNC II™ 72-BIT FIFO 512 x 72, 1,024 x 72 2,048 x 72, 4,096 x 72 8,192 x 72, 16,384 x 72 32,768 x 72, 65,536 x 72 www.Data

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a FEATURES 8-Bit ADC with 4.5 ␮ s Conversion Time On-Chip Track and Hold Operating Supply Range: +2.7 V to +5.5 V Specifications at +2.7 V – 3.6 V and

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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RTL8198-GR IEEE 802.11n GIGABIT ETHERNET AP/ROUTER NETWORK PROCESSOR PRELIMINARY DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 0.91 02 Augu

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, L

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APW8819 DDR TOTAL POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER WITH 1.5A LDO Features Buck Controller (VDDQ) General Description The APW8819 integrate

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КТ819 кремниевый биполярный эпитаксиально-планарный n-p-n транзистор Назначение Транзистор n-p-n кремниевый эпитаксиально-планарный в пластмассовом к

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Analog Two Way Radio IC BK4819 Features  World wide band: 18 MHz ~ 660 MHz, 840 MHz ~1300 MHz  12.5/25/6.25/20 kHz channel spacing  On chip 7 dBm

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ATS2819 Datasheet Version: 1.9 2019-03-22 Declaration Disclaimer Information given in this document is provided just as a reference or example for th

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5368192W high density memory module is a CMOS dynamic RAM organized in 8192K x 36 bit words. The mo

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Random-Access Memories (RAMs) _______________________ CDM6264 NC AI2 A7 A. AS •• A' A2 AI AD 1/01 1/02 I103 v•• •• 6 10 .. 12 I. 28 VDD 27 iVf 2. C

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HIP6601, HIP6603 Data Sheet January 2000 File Number 4819 Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual M

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AiT Components Inc. www.ait-components.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE DESCRIPTION The B5817W~B5819W are available in SOD-1

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Transformer Model:TMS91365CT 55.5 Max 10 5 A TMS####CT 29 Max 4 1 4 5 B 13.0 Max C E 4.0±0.5 1 4 Top View Front view Side view Test data

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B5817W-B5819W Schottky Barrier Diode + SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. Features - For use in low voltage, high frequency inverter

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www.vishay.com VS-1N5819, VS-1N5819-M3 Vishay Semiconductors Schottky Rectifier, 1.0 A DO-204AL Cathode Anode PRODUCT SUMMARY Package IF(AV) VR

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PRELIMINARY CYW20819 Ultra Low Power, BLE/BR/EDR Bluetooth 5.0 SoC The CYW20819 is a Bluetooth 5 single-chip solution targeted at Bluetooth Mesh, a

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tail RTL8192EU-CG onfiden SINGLE-CHIP 802.11b/g/n 2T2R WLAN USB C ly 2 2.0 CONTROLLER ealTEKr 360 On/ 08 / 1 DATASHEET R Fo 2014 (CONFIDENTIAL:

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