L-819 Datasheet | Specifications & PDF Download

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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APW8819 DDR TOTAL POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER WITH 1.5A LDO Features Buck Controller (VDDQ) General Description The APW8819 integrate

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RTL8198-GR IEEE 802.11n GIGABIT ETHERNET AP/ROUTER NETWORK PROCESSOR PRELIMINARY DATASHEET (CONFIDENTIAL: Development Partners Only) Rev. 0.91 02 Augu

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Analog Two Way Radio IC BK4819 Features  World wide band: 18 MHz ~ 660 MHz, 840 MHz ~1300 MHz  12.5/25/6.25/20 kHz channel spacing  On chip 7 dBm

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20F1oR4re/a3l60T08E/OK1nl2Cyo n fidentail RTL8192EU-CG SINGLE-CHIP 802.11b/g/n 2T2R WLAN USB 2.0 CONTROLLER DATASHEET (CONFIDENTIAL: Development P

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OCP8192B LED ◼ ◼ ⚫ 500V MOSFET OCP8192B ， ⚫ （QR-Bulk）， LED ⚫ 。 ⚫ ⚫ OCP8192B 500V MOSFET ⚫ ±4% 。， ⚫ VCC 、IC ， 。 M 。 OCP819

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RTL8191SE SINGLE-CHIP IEEE 802.11b/g/n WLAN CONTROLLER with PCI EXPRESSTM INTERFACE DATASHEET Rev. 0.4 26th Nov 2008 Track ID: JATR Realtek Semiconduc

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OCP8192C LED ◼ ◼ ⚫ 500V MOSFET OCP8192C ， ⚫ （QR-Bulk）， LED ⚫ 。 ⚫ ⚫ OCP8192C 500V MOSFET ⚫ ±5% 。， ⚫ VCC 、IC ， 。 M 。 OCP819

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SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C

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® ISL28194, ISL28195 Data Sheet October 9, 2007 FN6236.3 Ultra-Small, 330nA and 1µA Single Supply, Rail-to-Rail Input/Output (RRIO) Op Amps www.data

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www.DataSheet4U.com Production March 2003 ® P1818/19/20/21/22 Low Power Mobile VGA EMI Reduction IC Features • • • • FCC approved method of EMI a

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AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

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ATS2819 Datasheet Version: 1.9 2019-03-22 Declaration Disclaimer Information given in this document is provided just as a reference or example for th

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an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Appli

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August 2005 www.DataSheet4U.com rev 0.2 ASM3P1819N Low Power Mobile VGA EMI Reduction IC Features ƒ ƒ ƒ FCC approved method of EMI attenuation Provi

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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