L4N6 Datasheet | Specifications & PDF Download

4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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DTP4N6SJ/DTP4N6FSJ/DTU4N6SJ/DTL4N6SJ www.din-tek.jp /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Ma

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DTP4N6/DTP4N6F/DTU4N6/DTL4N6 www.din-tek.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650

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DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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Teccor® brand Thyristors 1 Amp Sensitive & Standard Triacs Lx01Ex & LxNx & Qx01Ex & QxNx Series RoHS Main Features Symbol IT(RMS) VDRM/ VRRM IGT (Q1

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 4A 600V 2.2Ω 18nC SL4N60    LED APPLICATIONS  High efficiency switch

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 4A 650V 2.6Ω 18nC SL4N65    LED APPLICATIONS  High efficiency switch

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