L4N6 Datasheet | Specifications & PDF Download

Teccor® brand Thyristors 1 Amp Sensitive & Standard Triacs Lx01Ex & LxNx & Qx01Ex & QxNx Series RoHS Main Features Symbol IT(RMS) VDRM/ VRRM IGT (Q1

(10 views)

DTP4N6SJ/DTP4N6FSJ/DTU4N6SJ/DTL4N6SJ www.din-tek.jp /$IBOOFM
7
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Ma

(6 views)

4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

(4 views)

DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

(4 views)

N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 4A 600V 2.2Ω 18nC SL4N60    LED APPLICATIONS  High efficiency switch

(4 views)

N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 4A 650V 2.6Ω 18nC SL4N65    LED APPLICATIONS  High efficiency switch

(4 views)

4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

(3 views)

4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

(3 views)

4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

(1 views)

(1 views)

(1 views)

DTP4N6/DTP4N6F/DTU4N6/DTL4N6 www.din-tek.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650

(1 views)