LD-101 Datasheet | Specifications & PDF Download

FAN7340 — LED Backlight Driving Boost Switch July 2013 FAN7340 LED Backlight Driving Boost Switch Features  Single-Channel Boost LED Switch  Inte

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BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BIS TO-251(IS) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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RoHS AS50 Axial Shielded Inductors Allied Part Number Inductance Tolerance (µh) (%) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10

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MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wi

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NIKO-SEM N-Channel Enhancement Mode PG1010BK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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PWRLITE LD1010D High Performance N-Channel POWERJFETTM with PN Diodes Features ™ Trench Power JFET with low threshold voltage Vth. ™ Device fully “ON”

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RoHS Power Chip Shielded Inductors Dimensions: Inches (mm) PCS1014 Allied Part Number Inductance (µh) Tolerance (%) Test Freq. KHz, 1v RDC (Ω) M

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RoHS ASPC80 Power Shielded Inductors Inches (mm) Dimensions: 1.00 Max (25.4) 20 AWG/TCW 100K 0.550 Max (13.97) 1.15 Nominal (29.21) Features • Ma

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KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-B

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.

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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers September 2006 CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MO

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KSR1010 KSR1010 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resis

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RP111x Series Good Transient Response Low Voltage 500mA LDO NO.EA-241-150204 OUTLINE The RP111x Series are CMOS-based LDO regulators featuring 500m

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COMPACT SHIELDED SMD POWER INDUCTOR FOR AUTOMOTIVE ASPIAIG-SXXXX SERIES FEATURES • High reliability wire-wound construction • Shielded construction

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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers September 2006 CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MO

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www.DataSheet4U.com Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance r

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