LEVEL Datasheet | Specifications & PDF Download

S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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SMD Type TrenchPLUS standard level FET KUK7105-40ATE TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC www.DataSheet4U.com Unit: mm +0.1 1.27-0.1 +0.2 4.57

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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GmbH M LLET Füllstandtechnik Full, empty and demand indicator with protecting tube for vertical mounting with KD for any mounting position (with bear

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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AZC199-04S Low Capacitance High ESD Level Protection Array For High Speed I/O Port Features ESD Protect for 4 high-speed I/O lines and one VDD line P

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Impala Linear Corporation ILC5140/5141/5142 Advance CMOS Multilevel Voltage Detector General Description The ILC514X is an innovative, multilevel vol

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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® L4620 LIQUID LEVEL ALARM . . . . . . DRIVES DIRECTLY 300 mA ALARM LOAD PROGRAMMABLE INPUT POLARITY TO ACTIVATE THE OUTPUT STAGE PROGRAMMABLE DELA

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Platin

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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EMB09N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 10A G UIS, Rg

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EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested

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