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ACS712 - Fully Integrated / Hall Effect-Based Linear Current Sensor
ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE.UGN3503 - RATIOMETRIC / LINEAR HALL-EFFECT SENSORS
3503 The UGN3503LT, UGN3503U, and UGN3503UA Hall-effect sensors accurately track extremely small changes in magnetic flux density—changes generally to.A1321 - Ratiometric Linear Hall Effect Sensor IC
A1321/A1322/A1323 Ratiometric Linear Hall Effect Sensor for High-Temperature Operation The A132X family of linear Hall-effect sensors are optimized, s.A1324 - Low-Noise Linear Hall-Effect Sensor
A1324, A1325, and A1326 Low-Noise Linear Hall-Effect Sensor ICs with Analog Output FEATURES AND BENEFITS • Temperature-stable quiescent output voltag.J174 - SINGLE P-CHANNEL JFET SWITCH
J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATI.PN4393 - SINGLE N-CHANNEL JFET SWITCH
FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 rDS(on) ≤ 30Ω tON ≤ 15ns .LSK389C - Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier
LSK389 A/B/C/D Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier Absolute Maximum Ratings @ 25 °C (unless otherwise stated) Maximum Temperatur.A1301 - Continuous-Time Ratiometric Linear Hall Effect Sensor
A1301 and A1302 Continuous-Time Ratiometric Linear Hall-Effect Sensor ICs FEATURES AND BENEFITS • Low-noise output • Fast power-on time • Ratiometric.ACS758LCB - Linear Current Sensor
ACS758xCB Thermally Enhanced, Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 100 µΩ Current Conductor FEATURES AND BENEFITS • Indu.LS5909 - DUAL N-CHANNEL JFET AMPLIFIER
FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless oth.LS5908 - DUAL N-CHANNEL JFET AMPLIFIER
FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless oth.LS5907 - DUAL N-CHANNEL JFET AMPLIFIER
FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless oth.LS5906 - DUAL N-CHANNEL JFET AMPLIFIER
FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless oth.LS5905 - DUAL N-CHANNEL JFET AMPLIFIER
FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless oth.3N164 - P-CHANNEL ENHANCEMENT MODE MOSFET
3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.3N163 - P-CHANNEL ENHANCEMENT MODE MOSFET
3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.J177 - SINGLE P-CHANNEL JFET SWITCH
J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATI.J176 - SINGLE P-CHANNEL JFET SWITCH
J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATI.J175 - SINGLE P-CHANNEL JFET SWITCH
J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATI.SST177 - SINGLE P-CHANNEL JFET SWITCH
J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATI.