LN2312 Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For U

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N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 4.5A ■ Features  Super high dense cell design

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For U

(21 views)