* 1)VDS= 20V 2)RDS(ON), Vgs@4.5V, Ids@5.0A = 41m Ω 3)RDS(ON), Vgs@2.5V, Ids@4.5A = 47m Ω LN2312LT1G 3 1 2 SOT
* 23 (TO
* 236AB) 3D
* DEVICE MARKING AND ORDERING INFORMATION Device LN2312LT1G LN2312LT3G Marking N12 N12 Shipping 3000/Tape&Reel 10000/Tape&Reel G 1 S 2
* MAXIMUM
LN2312LT1G Datasheet (535.12 KB)
LN2312LT1G
LRC
535.12 KB
20v n-channel mosfet.
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
*APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design F.
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