Description
LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET *APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved S.
Features
* VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω
* DEVICE MARKING AND ORDERING INFORMATION
Device LN2302LT1G LN2302LT3G
Marking N02 N02
Shipping 3000/Tape&Reel 10000/Tape&Reel
* MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain
* to
* Source Voltage G
Applications
* 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM 2)We declare that the material of product compliant with RoHS
requirements and Halogen Free