* VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω
* DEVICE MARKING AND ORDERING INFORMATION Device LN2302LT1G LN2302LT3G Marking N02 N02 Shipping 3000/Tape&Reel 10000/Tape&Reel
* MAXIMUM RATINGS(Ta = 25℃) Parameter Drain
* to
* Source Voltage G
LN2302LT3G Datasheet (533.82 KB)
LN2302LT3G
LRC
533.82 KB
20v n-channel mosfet.
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
*APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved S.
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