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LN2302LT3G, LN2302LT1G 20V N-Channel MOSFET

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Description

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET *APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved S.

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This datasheet PDF includes multiple part numbers: LN2302LT3G, LN2302LT1G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
LN2302LT3G, LN2302LT1G
Manufacturer
LRC
File Size
533.82 KB
Datasheet
LN2302LT1G-LRC.pdf
Description
20V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: LN2302LT3G, LN2302LT1G.
Please refer to the document for exact specifications by model.

Features

* VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω
* DEVICE MARKING AND ORDERING INFORMATION Device LN2302LT1G LN2302LT3G Marking N02 N02 Shipping 3000/Tape&Reel 10000/Tape&Reel
* MAXIMUM RATINGS(Ta = 25℃) Parameter Drain
* to
* Source Voltage G

Applications

* 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM 2)We declare that the material of product compliant with RoHS requirements and Halogen Free

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