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LN2305 - P-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number: LN2305
Manufacturer: natlinear
File Size: 658.35 KB
Datasheet: LN2305-natlinear.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

LN2305 Product details

Description

VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 135 @ VGS=-4.5V 180 @ VGS=-2.5V

Features

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3L/B package.
Package.
SOT-23-3L/B 3 D S.
Ordering Information GS 12 SOT-23-3L/B (Top View) G D Part Number LN2305 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current D.

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P-Channel Enhancement Mode Field Effect Transistor natlinear

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