* 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.0A = 62m Ω
* DEVICE MARKING AND ORDERING INFORMATION Device LN2306LT1G LN2306LT3G Marking N06 N06 Shipping 3000/Tape&Reel 10000/Tape&Reel LN2306LT1G 3 1 2 SOT
* 23 (TO
LN2306LT3G Datasheet (483.52 KB)
LN2306LT3G
LRC
483.52 KB
30v n-channel enhancement-mode mosfet.
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
*APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design Fo.
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