Enhancement-Mode Datasheet | Specifications & PDF Download

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Rectron

A19T - P-Channel Enhancement Mode Power MOSFET

 RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
Rating: 5 ★★★★★ (366 votes)
Bruckewell

A1SHB - P-Channel Enhancement Mode Power MOSFET

 MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.
Rating: 5 ★★★★★ (296 votes)
NCE Power Semiconductor

NCE4688 - N & P-Channel Enhancement Mode Power MOSFET

 http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog.
Rating: 5 ★★★★★ (232 votes)
ROUM

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

 20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
Rating: 4 ★★★★ (175 votes)
NCE Power Semiconductor

NCE8290 - N-Channel Enhancement Mode Power MOSFET

 http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology .
Rating: 4 ★★★★ (161 votes)
Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

   N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%.
Rating: 4 ★★★★ (153 votes)
HOOYI

HY5012W - N-Channel Enhancement Mode MOSFET

 HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.
Rating: 3 ★★★ (131 votes)
HUAXUANYANG

9435A - -30V P-Channel Enhancement Mode MOSFET

 SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic .
Rating: 3 ★★★ (129 votes)
HOOYI

HY3008P - N-Channel Enhancement Mode MOSFET

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Rating: 3 ★★★ (128 votes)
NCE Power Semiconductor

NCE82H140 - N-Channel Enhancement Mode Power MOSFET

 http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol.
Rating: 3 ★★★ (115 votes)
HOOYI

HY3810B - N-Channel Enhancement Mode MOSFET

 HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .
Rating: 3 ★★★ (110 votes)
Rectron

2N7002 - N-Channel Enhancement Mode Power MOSFET

 2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.
Rating: 3 ★★★ (104 votes)
NCE Power

NCE8580 - N-Channel Enhancement Mode Power MOSFET

 http://www.ncepower.com Pb Free Product NCE8580 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8580 uses advanced trench technology .
Rating: 3 ★★★ (104 votes)
NCE Power Semiconductor

NCE40H12 - N-Channel Enhancement Mode Power MOSFET

 http://www.ncepower.com Pb Free Product NCE40H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technolog.
Rating: 3 ★★★ (102 votes)
HOOYI

HY1906B - N-Channel Enhancement Mode MOSFET

 HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.
Rating: 2 ★★ (98 votes)
H&M Semiconductor

HM4409 - P-Channel Enhancement Mode Power MOSFET

 +0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), This device .
Rating: 2 ★★ (94 votes)
FBM

FBM80N70P - N-Channel Enhancement Mode MOSFET

 FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg.
Rating: 2 ★★ (93 votes)
HOOYI

HY3215 - N-Channel Enhancement Mode MOSFET

 HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.
Rating: 2 ★★ (92 votes)
HOOYI

HY5608W - N-Channel Enhancement Mode MOSFET

 HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
Rating: 2 ★★ (89 votes)
HOOYI

HY5608A - N-Channel Enhancement Mode MOSFET

 HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
Rating: 2 ★★ (89 votes)
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