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G05NP06S2 - N and P Channel Enhancement Mode Power MOSFET

G05NP06S2 Description

GOFORD G05NP06S2 N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

G05NP06S2 Features

* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -10V)
* RDS(ON) (at VGS = -4.5V)
* RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram

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Datasheet Details

Part number
G05NP06S2
Manufacturer
GOFORD
File Size
1.01 MB
Datasheet
G05NP06S2-GOFORD.pdf
Description
N and P Channel Enhancement Mode Power MOSFET

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