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LN2306 - N-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number: LN2306
Manufacturer: natlinear
File Size: 523.15 KB
Datasheet: LN2306-natlinear.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

LN2306 Product details

Description

VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160 @ VGS= 2.5V LN2306

Features

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3B package.
Package.
SOT-23-3B 3 D D.
Ordering Information GS 12 SOT-23-3B (Top View) G S Part Number LN2306 Storage Temperature -55°C to +150°C Package SOT-23-3B Devices Per Reel 3000.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-s.

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N-Channel Enhancement Mode Field Effect Transistor natlinear

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