
Part number:
LN2308LT1G
Manufacturer:
LRC
File Size:
1.85MB
Download:
Description:
60v n-channel enhancement-mode mosfet.
LN2308LT1G
LRC
1.85MB
60v n-channel enhancement-mode mosfet.
📁 Related Datasheet
LN2308 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
LN2308
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 260 @ VGS= .
LN2308B - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
LN2308B
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 260 @ VGS=.
LN2308C - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
LN2308C
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 260 @ VGS=.
LN2300 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.
LN2301 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2301
■ General Description
VDSS -20V
Product Summary ID
-3.6A
RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 1.
LN2302 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 65 @ VGS= 4.5V 90 @ VGS= 2.
LN2302ALT1G - 20V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V .
LN2302LT1G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2302LT3G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2305 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2305
■ General Description
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 135 @ VG.
Stock and price
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