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LN2308 - N-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number: LN2308
Manufacturer: natlinear
File Size: 720.81 KB
Datasheet: LN2308-natlinear.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

LN2308 Product details

Description

VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V

Features

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3L/B package.
Package.
SOT-23-3B/ SOT-23-3L 3 D D.
Ordering Information GS 12 SOT-23-3B/SOT-23-3L (Top View) G S Part Number LN2308 Storage Temperature -55°C to +150°C.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-source Diode forward.

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Published: Dec 4, 2018 |