LN2301
natlinear
310.70kb
P-channel enhancement mode field effect transistor. VDSS -20V Product Summary ID -3.6A RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 115@ VGS=-2.5V
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LN2300 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.
LN2302 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 65 @ VGS= 4.5V 90 @ VGS= 2.
LN2302ALT1G - 20V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V .
LN2302LT1G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2302LT3G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2305 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2305
■ General Description
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 135 @ VG.
LN2306 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160.
LN2306LT1G - 30V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ul.
LN2306LT3G - 30V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ul.
LN2307 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2307
■ General Description
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 300 @ VG.