LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET

LRC

Description

LESHAN RADIO COMPANY, LTD.30V N-Channel Enhancement-Mode MOSFET *APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design Fo.

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Datasheet Specifications

Part number: LN2306LT1G
Manufacturer: LRC
File Size: 483.52 KB
Datasheet: LN2306LT1G-LRC.pdf
Description: 30V N-Channel Enhancement-Mode MOSFET

Features

* 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.0A = 62m Ω
* DEVICE MARKING AND ORDERING INFORMATION Device LN2306LT1G LN2306LT3G Marking N06 N06 Shipping 3000/Tape&Reel 10000/Tape&Reel LN2306LT1G 3 1 2 SOT
* 23 (TO

Applications

* 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free.

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LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET LRC

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