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LN2300 - N-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number: LN2300
Manufacturer: natlinear
File Size: 285.39 KB
Datasheet: LN2300-natlinear.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

LN2300 Product details

Description

VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V LN2300

Features

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3L/B package.
Package.
SOT-23-3L/B 3 D D.
Ordering Information GS 12 SOT-23-3L/B (Top View) G S Part Number LN2300 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db Drain-source Diode forward current.

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N-Channel Enhancement Mode Field Effect Transistor natlinear

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