LIPTAI ■ Applications Device optimized for low f.
AON7404G - 20V N-Channel MOSFET
AON7404G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary V.AO3415 - 20V P-Channel MOSFET
AO3415 20V P-Channel MOSFET General Description The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio.JW5022 - 2A 20V Synchronous Step-Down Converter
Parameters Subject to Change Without Notice FEATURES 4.6V to 20V operating input range 2A output current Up to 94% efficiency High efficiency (>85%) a.HLD123D - 220V SERIES TRAN SISTORS
220V/(220V SE RI ES TRAN SI STORS ) HL D1 23D : ROHS FEATURES: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA : APPLICATION:.TC4953 - 20V P-channel enhanced MOS FET
1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (:S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(.JW5025 - 3A 20V Synchronous Step-Down Converter
Parameters Subject to Change Without Notice FEATURES 4.6V to 20V operating input range 3A output current Up to 94% efficiency High efficiency (>85%) a.6F20V - N-channel MOSFET
STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on).ME2301DC-G - P-Channel 20V (D-S) MOSFET
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field eff.20VZ11 - Low Power-Loss Voltage Regulators
Low Power-Loss Voltage Regulators PQ20VZ51/PQ20VZ11 www.DataSheet4U.com PQ20VZ51/PQ20VZ11 Variable Output, Surface Mount Type Low Power-Loss Voltag.HLD128D - 220V SERIES TRAN SISTORS
220V/(220V SE RI ES TRAN SI STORS ) HL D1 28D : ROHS FEATURES: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA : APPLICATION:.AO3414 - 20V N-Channel MOSFET
AO3414 20V N-Channel MOSFET General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio.6MBP20VSA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP20VSA060-50 IGBT Modules IGBT MODULE (V series) 600V / 20A / IPM Features Low-side IGBTs a.AO3413 - 20V P-Channel MOSFET
AO3413 20V P-Channel MOSFET General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio.Z02W20V - ZENER DIODE
SEMICONDUCTOR TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES Small Package : SOT-23 Normal Voltage .AON7407 - 20V P-Channel MOSFET
AON7407 20V P-Channel MOSFET General Description Product Summary The AON7407 combines advanced trench MOSFET technology with a low resistance packa.MP1484 - 20V Synchronous Step-Down Converter
03 3A, 20V Synchronous Step-Down Converter FEATURES 4.6V to 20V operating input range 3A output current Up to 94% efficiency High efficienc.TSM9428 - 20V N-Channel MOSFET
TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Sou.AO3416 - 20V N-Channel MOSFET
AO3416 20V N-Channel MOSFET General Description Product Summary The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate c.BZD27C22PH - 10V - 220V Zener Diode
BZD27C10PH – BZD27C220PH Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● AEC-Q101 qualified ● Silicon zener diodes ● Low profile surface-.AO3420 - 20V N-Channel MOSFET
AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate c.