Datasheet Details
| Part number | AO4402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.43 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AO4402_Alpha.pdf |
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Overview: AO4402 20V N-Channel MOSFET General.
| Part number | AO4402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.43 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AO4402_Alpha.pdf |
|
|
|
Product Summary The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 100% UIS Tested 100% Rg Tested 20V 20A < 5.5mW < 7mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 20 16 140 57 162 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 1.1: August 2023 www.aosmd.com Page 1 of 6 AO4402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 0.5 1 1.6 V ID(ON) On state drain current VGS=10V, VDS=5V 140 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A TJ=125°C 4.6 5.5 mW 5.8 7 VGS=2.5V, ID=18A 5.5 7 mW gFS Forward Transconductance VDS=5V, ID=20A 105 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4402 | N-Channel MOSFET | Freescale |
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AO4402 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
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