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AO4406 - N-Channel MOSFET

General Description

The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

AO4406 and AO4406L are electrically identical.

Key Features

  • VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current B Repetitive Avalanche Energy L=0.3mH TA=25° C Power Dissipation TA=70° C Junction and Storage Temperature Range Thermal C.

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📁 Similar Datasheet

Part Number Description Manufacturer
AO4406 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Alpha Industries
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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4406A N-Channel MOSFET
AO4406AL N-Channel MOSFET
AO4400 N-Channel MOSFET
AO4401 P-Channel MOSFET
AO4402 20V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free Features VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.