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AO4403 - 30V P-Channel MOSFET

General Description

The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4403 30V P-Channel MOSFET General Description Product Summary The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -30V -6A < 48mW < 57mW < 80mW SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C ID -6 -5 Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 18 Avalanche energy L=0.