Datasheet4U Logo Datasheet4U.com

AO4406AL - N-Channel MOSFET

General Description

The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Key Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 11.5mΩ RDS(ON) < 15.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D S S S G D D D D G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 12 10 100 22 24 3.1 2 -55 to 150 Units V V A A mJ W °C TC=25°C TC=70°C ID IDM IAR EAR P.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4406A N-Channel MOSFET Freescale
AO4406A N-Channel MOSFET Kexin
AO4406 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Alpha Industries
AO4406 N-Channel MOSFET Freescale
AO4406 N-Channel MOSFET Kexin

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4406A N-Channel MOSFET
AO4406 N-Channel MOSFET
AO4400 N-Channel MOSFET
AO4401 P-Channel MOSFET
AO4402 20V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 12A RDS(ON) < 11.5mΩ RDS(ON) < 15.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D S S S G D D D D G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 12 10 100 22 24 3.