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AO4400 - N-Channel MOSFET

General Description

The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.1 -5.1 -60 3 2.1 -55 to 150 Ther.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4401 P-Channel MOSFET
AO4402 20V N-Channel MOSFET
AO4402G 20V N-Channel MOSFET
AO4403 30V P-Channel MOSFET
AO4404 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.1 -5.1 -60 3 2.