Datasheet Details
| Part number | AO4404B |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4404B_AlphaOmegaSemiconductors.pdf |
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Overview: AO4404B 30V N-Channel MOSFET General.
| Part number | AO4404B |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4404B_AlphaOmegaSemiconductors.pdf |
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Product Summary The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 100% UIS Tested 100% Rg Tested 30V 8.5A < 24mW < 30mW < 48mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 8.5 7.1 60 14 10 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 3.1: August 2023 www.aosmd.com Page 1 of 6 AO4404B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 0.65 1.05 1.45 V ID(ON) On state drain current VGS=4.5V, VDS=5V 60 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A VGS=4.5V, ID=8.5A TJ=125°C 17.7 24 mW 28 34 19 30 mW VGS=2.5V, ID=5A 24 48 mW gFS Forward Transconductance VDS=5V, ID=8.5A 37 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PAR
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|---|---|---|---|
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AO4404B | N-Channel MOSFET | Kexin |
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AO4404B | N-Channel MOSFET | Freescale |
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AO4404 | N-Channel MOSFET | Kexin |
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