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AO3416 - 20V N-Channel MOSFET

General Description

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

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Full PDF Text Transcription (Reference)

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AO3416 20V N-Channel MOSFET General Description Product Summary The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) ESD protected 20V 6.