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AO3414 - 20V N-Channel MOSFET

General Description

The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = 20V ID = 3A RDS(ON) < 62mW RDS(ON) < 70mW RDS(ON) < 85mW (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 3 2.5 16 1.4 0.9 -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO3414 20V N-Channel MOSFET General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS = 20V ID = 3A RDS(ON) < 62mW RDS(ON) < 70mW RDS(ON) < 85mW (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 3 2.5 16 1.4 0.