Datasheet Summary
Dual N-Channel 20 V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.70 at VGS = 4.5 V
0.85 at VGS = 2.5 V
1.25 at VGS = 1.8 V
ID (mA) 600 500 350
S1 1
SOT-563 SC-89
6 D1
G1 2
100 Ω
100 Ω
5 G2 Marking Code: C
D2 3
4 S2
Top View Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Features
- Halogen-free According to IEC 61249-2-21
Definition
- TrenchFET® Power MOSFET: 1.8 V Rated
- Very Small Footprint
- High-Side Switching
- Low On-Resistance: 0.7
- Low Threshold: 0.8 V (typ.)
- Fast Switching Speed: 10 ns
- 1.8 V Operation
- Gate-Source ESD Protected: 2000...
