Si1024X - Dual N-Channel 20V MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET: 1.8 V Rated.
Very Small Footprint.
High-Side Switching.
Low On-Resistance: 0.7 .
Low Threshold: 0.8 V (typ. ).
Fast Switching Speed: 10 ns.
1.8 V Operation.
Gate-Source ESD Protected: 2000 V.
Compliant to RoHS Directive 2002/95/EC.

Si1024X dual n-channel 20v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si1024X
Manufacturer	Vishay
File Size	137.39 KB
Description	Dual N-Channel 20V MOSFET
Datasheet	Si1024X Datasheet

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Full PDF Text Transcription (Reference)

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Dual N-Channel 20 V (D-S) MOSFET Si1024X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350 S1 1 SOT-563 SC-89 6 D1 G1 2 100 Ω 100 Ω 5 G2 Marking Code: C D2 3 4 S2 Top View Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • 1.