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AP8G02LI - 20V N+P-Channel Enhancement Mode MOSFET

General Description

The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ）.

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Datasheet Details

Part number AP8G02LI
Manufacturer APM
File Size 1.44 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8G02LI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP8G02LI SOT23-6L Marking AP8G02LI Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.5 -7.