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AP8G02LI - 20V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ）.

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Datasheet preview – AP8G02LI

Datasheet Details

Part number AP8G02LI
Manufacturer APM
File Size 1.44 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8G02LI Datasheet
Additional preview pages of the AP8G02LI datasheet.

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Full PDF Text Transcription

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Description AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP8G02LI SOT23-6L Marking AP8G02LI Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.5 -7.
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