DESCRIPTION
AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP8G02LI SOT23-6L Marking AP8G02LI ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.5 -7.8 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 6.2 -5.5 IDM Pulsed Drain Current2 28 -32 EAS Single Pulse Avalanche Energy3 24 78 PD@TA=25℃ Total Power Dissipation4 1.5 1.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 105 RθJC Thermal Resistance Junction-Case1 50 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP8G02LI RVE1.0 永源微電子科技有限公司 1 AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET N-ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
