Part AP8G04BS
Description 40V N+P-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer APM
Size 900.37 KB
APM

AP8G04BS Overview

Description

The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V (Type:28mΩ) VDS = -40V ID =-7.2A RDS(ON) < 50mΩ @ VGS=-10V (Type:42mΩ)