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AP8G04BS - 40V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -40V ID =-7.2A RDS(ON) < 50mΩ @ VGS=-10V （Type：42mΩ）.

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Datasheet preview – AP8G04BS

Datasheet Details

Part number AP8G04BS
Manufacturer APM
File Size 900.37 KB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8G04BS Datasheet
Additional preview pages of the AP8G04BS datasheet.

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Full PDF Text Transcription

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AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -40V ID =-7.
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