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AP8G04BS Datasheet PDF

APM AP8G04BS

The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP8G04BS
Datasheet AP8G04BS Download
Manufacturer
APM
Description 40V N+P-Channel Enhancement Mode MOSFET
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AP8G04BS datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V (Type:28mΩ) VDS = -40V ID =-7.2A RDS(ON) < 50mΩ @ VGS=-10V (Type:42mΩ) Application Wireless charging Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking AP8G04BS SOP-8L AP8G04BS XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter Rating N-Ch P-Ch VDS Drain-Source Voltage 40 -40 VGS Gate-Source Voltage ±20 ±20 ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.8 -7.2 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 5.0 -4.1 IDM Pulsed Drain Current2 20 -19 EAS Single Pulse Avalanche Energy3 15 32 PD@TA=25℃ Total Power Dissipation4 1.65 TSTG Storage Temperature Range -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 85 35 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W 1 AP8G04BS REV1.0 永源微電子科技有限公司 AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET N-Channel

ELECTRICAL CHARACTERISTICS

(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
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